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Positron Annihilation in Semiconductors
208,09 € *
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Erscheinungsdatum: 21.05.2003, Medium: Buch, Einband: Gebunden, Titel: Positron Annihilation in Semiconductors, Titelzusatz: Defect Studies, Auflage: 1. Auflage von 1930 // 1st ed. 1999. Corr. 2nd printing 2003, Autor: Krause-Rehberg, Reinhard // Leipner, Hartmut S., Verlag: Springer Berlin Heidelberg // Springer Berlin, Sprache: Englisch, Schlagworte: Halbleiter // Physik // Wissenschaftliche Ausstattung // Experimente und Techniken // Spektroskopie // Spektrochemie // Massenspektrometrie // Werkstoffprüfung // Elektronische Geräte und Materialien, Rubrik: Atomphysik // Kernphysik, Seiten: 400, Informationen: HC runder Rücken kaschiert, Gewicht: 764 gr, Verkäufer: averdo

Anbieter: averdo
Stand: 05.07.2020
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Defect Studies in III-V Semiconductors by Posit...
71,99 € *
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Defect Studies in III-V Semiconductors by Positron Annihilation ab 71.99 € als Taschenbuch: Diffusion of Dopants in III-V Compound Semiconductors: Defect Studies by Positron Annihilation Spectroscopy. Aus dem Bereich: Bücher, Wissenschaft, Physik,

Anbieter: hugendubel
Stand: 05.07.2020
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Positron Annihilation in Semiconductors
229,99 € *
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Positron Annihilation in Semiconductors ab 229.99 EURO Defect Studies. Softcover reprint of hardcover 1st ed. 1999

Anbieter: ebook.de
Stand: 05.07.2020
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Defect Studies in III-V Semiconductors by Posit...
71,99 € *
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Defect Studies in III-V Semiconductors by Positron Annihilation ab 71.99 EURO Diffusion of Dopants in III-V Compound Semiconductors: Defect Studies by Positron Annihilation Spectroscopy

Anbieter: ebook.de
Stand: 05.07.2020
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Defects and positron states in Compound Semicon...
55,90 € *
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Four different application oriented III-V compound semiconductors have been selected for investigation using Positron annihilation spectroscopy (PAS) techniques. First one is Fe-doped semi-insulating Indium Phosphide. Positron annihilation lifetime spectroscopy (PALS) and Doppler broadening annihilation radiation (DBAR) measurements have been done in 140 MeV O(6+) ion implanted Fe-doped semi-insulating InP sample to observe irradiation induced defects formation and recovery of those defects with annealing temperature. Second, third & last samples are undoped Indium Antimonide, undoped Indium Phosphide & n-type Gallium Arsenide. PALS & DBAR measurements have been carried out in 40 MeV alpha irradiated undoped InSb, undoped InP and n-type GaAs samples to observe irradiation induced defects formation and recovery of those defects with annealing temperature respectively.

Anbieter: Dodax
Stand: 05.07.2020
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Swift Heavy Ion induced effects in III-V compou...
61,90 € *
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This book deals with ion beam modifications and characterization of low dimensional semiconductors. For ion beams at velocities comparable to target electrons, the interaction is inelastic and induces competing processes leading to electronic and lattice defects. Effects are such that interfaces of multi quantum well structures change with ion beam conditions. The defect migration and annihilation induced by ion beam bombardment, as a function of electronic energy loss and fluence have been discussed. The initially strained and relaxed materials are further strained leading to band gap modification which is otherwise impossible to achieve. We have discussed the disorder activated modes and measured compressive strain as a function of electronic energy loss using Raman spectroscopy. Yellow and blue luminescence from Ga and N related defects in GaN have also been discussed. The band gap modification upon irradiation and subsequent rapid thermal annealing in GaAs related compound semiconductors is reported and discussed.

Anbieter: Dodax
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Defect Studies in III-V Semiconductors by Posit...
71,90 € *
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III-V compound semiconductors are used in the fabrication of a variety of discrete and integrated optoelectronic devices due to their superior electronic properties. Diffusion is one of the fundamental processes employed in the semiconductor industry. This process plays a key role in the kinetics of many microstructural changes that occur during processing of semiconductors. Lattice defects robustly influence or even determine most of the important properties, for example the optical and electrical properties, of semiconductor materials. They may reduce the density of free carriers or mediate dopant diffusion and are thus of essential technological importance. Studying the formation of point defects responsible for the occurrence of diffusion and their behavior are of vital importance to the understanding of the properties of these materials and to their successful application in semiconductor devices. Positron annihilation spectroscopy is a powerful tool for detecting and studying the lattice defects in materials. This book is dedicated to investigations of crystal defects in III-V compound semiconductors by means of positron annihilation.

Anbieter: Dodax
Stand: 05.07.2020
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Positron Annihilation in Semiconductors
311,00 CHF *
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The subject of this book is the investigation of lattice imperfections in semiconductors by means of positron annihilation. A comprehensive review is given of the different positron techniques, whose application to various kinds of defects, e.g. vacancies, impurity-vacancy complexes and dislocations, is described. The sensitivity range of positron annihilation with respect to the detection of these defects is compared to that of other defect-sensitive methods. The most prominent results obtained with positrons in practically all important semiconductors are reviewed. A special chapter of the book deals with positron annihilation as a promising tool for many technological purposes. The theoretical background necessary to understand the experimental results is explained in detail.

Anbieter: Orell Fuessli CH
Stand: 05.07.2020
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Positron Annihilation in Semiconductors
227,99 € *
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The subject of this book is the investigation of lattice imperfections in semiconductors by means of positron annihilation. A comprehensive review is given of the different positron techniques, whose application to various kinds of defects, e.g. vacancies, impurity-vacancy complexes and dislocations, is described. The sensitivity range of positron annihilation with respect to the detection of these defects is compared to that of other defect-sensitive methods. The most prominent results obtained with positrons in practically all important semiconductors are reviewed. A special chapter of the book deals with positron annihilation as a promising tool for many technological purposes. The theoretical background necessary to understand the experimental results is explained in detail.

Anbieter: Thalia AT
Stand: 05.07.2020
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